Product Summary
The 2SD2170 is a medium power transistor built-in zener diode between collector and base.
Parametrics
Absolute maximum ratings: (1)collector-base voltage, VCBO: 90V; (2)collector-emitter voltage, VCEO: 90V; (3)emitter-base voltage, VEBO: 6v; (4)collector current, IC: 2A DC; 3A pulse; (5)collector power dissipation, Pc: 2w; (6)junction temperature,Tj:150℃; (7)storage tempereture range, Tstg: -55 to 150℃.
Features
Features: (1)Built-in zener diode between collector and base; (2)Zener diode has low dispersion; (3)Strong protection against reverse power surges due to "L" loads; (4)Darlington connection for high DC current gain; (5)Built-in resistor between base and emitter; (6)Built-in damper diode
Diagrams
Image | Part No | Mfg | Description | Pricing (USD) |
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2SD2170 |
Other |
Data Sheet |
Negotiable |
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2SD2170 T100 R |
Other |
Data Sheet |
Negotiable |
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2SD2170T100 |
ROHM Semiconductor |
Transistors Darlington NPN 90V 2A |
Data Sheet |
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2SD2170T100R |
Other |
Data Sheet |
Negotiable |
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